Suppression of epitaxial silicon layer doping with boron in the presence of hydrogen chloride
- 1 January 1987
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (1) , 75-83
- https://doi.org/10.1002/crat.2170220119
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD siliconCrystal Research and Technology, 1985
- Autodoping of epitaxial silicon layers (II) diffusion-induced autodopingCrystal Research and Technology, 1985
- The Incorporation of Boron in Silicon Epitaxial Layer Growth in the Presence of Small Amounts of WaterJournal of the Electrochemical Society, 1984
- Kinetics of the Incorporation of Dopants into Epitaxial CVD SiliconCrystal Research and Technology, 1982
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981