Subnanosecond pulsed laser annealing of Se-implanted InP
- 1 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7) , 655-657
- https://doi.org/10.1063/1.94473
Abstract
Indium phosphide implanted with Se+ has been laser annealed with 70 ps pulses at both λ=0.53 and 1.06 μm. For doses of 1×1015 cm−2, activations of ∼70% with peak electron concentrations of 6×1019 cm−3 have been achieved, while for doses of 3×1015 cm−2, activations of 33% with peak electron concentrations of 1.2×1020 cm−3 were measured. The carrier depth profiles for the laser annealed samples are shallow while those for thermal annealing are broad compared to the as-implanted profiles. The morphology of the laser annealed spots is briefly discussed.Keywords
This publication has 16 references indexed in Scilit:
- Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantationApplied Physics Letters, 1982
- Laser annealing effects in ion-implanted GaAsJournal of Applied Physics, 1982
- Simple technique for measurements of pulsed Gaussian-beam spot sizesOptics Letters, 1982
- Pulsed laser annealing of selenium implanted InPJournal of Physics D: Applied Physics, 1981
- Influence of substrate temperature in laser annealing of arsenic-implanted siliconJournal of Applied Physics, 1981
- The effect of implant temperature on the electrical characteristics of ion implanted indium phosphideSolid-State Electronics, 1980
- Pulse electron annealing of ion-implanted InPApplied Physics Letters, 1979
- Pulsed electron-beam annealing of selenium-implanted gallium arsenideApplied Physics Letters, 1979
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Critical implantation temperature and annealing of indium phosphideJournal of Vacuum Science and Technology, 1979