Generation of strong composition-modulated structures and absence of ordered structures in InGaP crystals grown on (110) GaAs substrates by metalorganic chemical vapor deposition

Publisher Website
Google Scholar
Abstract
InGaP crystals grown on (110) GaAs substrates by chemical vapor deposition have been structurally investigated by transmission electron microscopy. No superstructure spots are present in electron diffraction patterns from (110) plan view and (11̄0) and (001) cross sections. However, composition-modulated structures with strong amplitude are found not only in the 〈001〉 but in the 〈11̄0〉 directions. They are found to be stable in the form of columnar domains during crystal growth. These results strongly suggest that atomic ordering and spinodal decomposition of the crystal are competing on the growth surface via surface diffusion of deposited atoms.