Contactless measurement of the piezoresistive properties of heavily doped silicon by infrared reflectance
- 31 May 1992
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 33 (1-2) , 39-42
- https://doi.org/10.1016/0924-4247(92)80222-o
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Polysilicon strain sensors using shear piezoresistanceSensors and Actuators, 1988
- Piezoresistive properties of polycrystalline and crystalline silicon filmsSensors and Actuators, 1987
- Polycrystalline silicon-based sensorsSensors and Actuators, 1986
- Effect of uniaxial stress on the acceptor ground state and on hopping conduction in p-type germanium and siliconPhilosophical Magazine Part B, 1984
- High-conductivity a-Si:H:F film and its performance for a power sensor and a strain gaugeJournal of Non-Crystalline Solids, 1983
- Piezospectroscopic studies of phosphorus-, boron-, and lithium-doped siliconCanadian Journal of Physics, 1979
- The effects of high uniaxial stress on the far infra-red impurity spectra of high purity n- and p-type siliconSolid State Communications, 1978
- Piezoresistive properties of polycrystalline siliconJournal of Applied Physics, 1976
- Effects of Uniaxial Stress on the Indirect Exciton Spectrum of SiliconPhysical Review B, 1971
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954