Comments on “RED intensity oscillations during MBE of GaAs”
- 1 July 1981
- journal article
- editorial
- Published by Elsevier in Surface Science
- Vol. 108 (2) , L444-L446
- https://doi.org/10.1016/0039-6028(81)90440-4
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- RED intensity oscillations during MBE of GaAsSurface Science, 1981
- Oscillations in the surface structure of Sn-doped GaAs during growth by MBESurface Science, 1981
- Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBEJournal of Physics C: Solid State Physics, 1981
- Iron doping in gallium arsenide by molecular beam epitaxyApplied Physics Letters, 1980
- Chromium and tellurium redistribution in GaAs and Al0.3Ga0.7As grown by molecular beam epitaxyJournal of Applied Physics, 1980
- Transients in the rate of crystal growthJournal of Crystal Growth, 1980
- Structure and stoichiometry of {100} GaAs surfaces during molecular beam epitaxyJournal of Crystal Growth, 1978
- Comparative LEED and RHEED examination of stepped surfaces; Application to Cu(111) and GaAs(100) vicinal surfacesSurface Science, 1977