Growth of well ordered Rh overlayers on Si surfaces: A field ion microscope study
- 1 January 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 179 (1) , L71-L76
- https://doi.org/10.1016/0039-6028(87)90115-4
Abstract
No abstract availableKeywords
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- 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspectiveIEEE Journal of Solid-State Circuits, 1979