Comparison of 80-200 nm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs), Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs, and In/sub 0.52/AlAs/In/sub 0.65/GaAs/InP HEMTs
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (12) , 2047-2055
- https://doi.org/10.1109/16.477760
Abstract
No abstract availableKeywords
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