Properties of ZnO films reactively RE sputtered using a Zn target
- 14 January 1984
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 17 (1) , 147-153
- https://doi.org/10.1088/0022-3727/17/1/020
Abstract
Zinc oxide films have been reactively RF sputtered using a Zn target. The variations of resistivity as well as the deposition rates have been studied as a function of various partial pressures of oxygen in the sputtering atmosphere. Transmission electron diffraction studies have been conducted to study the crystallinity of the deposited films as a function of deposition parameters.Keywords
This publication has 11 references indexed in Scilit:
- “Tunnel” magnetron characteristics and discharge diagnosticsThin Solid Films, 1981
- Reactive magnetron sputtering of ZnOJournal of Applied Physics, 1981
- The effect of O2 on reactively sputtered zinc oxideJournal of Applied Physics, 1980
- Controlled texture of reactively rf-sputtered ZnO thin filmsJournal of Applied Physics, 1978
- Studies of the optimum conditions for growth of rf-sputtered ZnO filmsJournal of Applied Physics, 1975
- Microstructure of ZnO films used for acoustic surface-wave generationJournal of Vacuum Science and Technology, 1975
- Properties of thin films of zinc oxide prepared by a chemical spray methodJournal of Physics and Chemistry of Solids, 1970
- High Resistivity Transparent ZnO Thin FilmsJournal of Vacuum Science and Technology, 1970
- PREPARATION OF ZnO THIN FILMS BY SPUTTERING OF THE COMPOUND IN OXYGEN AND ARGONApplied Physics Letters, 1966
- Dielectric Thin Films through rf SputteringJournal of Applied Physics, 1966