Influence of stoechiometry and hydrogen bonding on the insulating properties of PECVD silicon nitride
- 31 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3) , 215-219
- https://doi.org/10.1016/0378-4363(85)90572-8
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Properties of Chemically Vapor-Deposited Amorphous SiNx AlloysJapanese Journal of Applied Physics, 1982
- Hydrogen content of a variety of plasma-deposited silicon nitridesJournal of Applied Physics, 1982
- Formation of thin Si3N4 films by nitrogen ion implantation into siliconThin Solid Films, 1979
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978