Surface stress as a driving force for interfacial mixing
- 13 April 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 68 (15) , 2313-2316
- https://doi.org/10.1103/physrevlett.68.2313
Abstract
Displacive adsorption of As on vicinal Si(001) surfaces has in the past been attributed to reduction of step-related (extrinsic) surface stress. Here we show images of As adsorption on flat Si(001), obtained with in situ low-energy electron microscopy, and with scanning tunneling microscopy. We find displacive adsorption even on micrometer-sized terraces, on which steps play no significant role. These new results reveal the role of intrinsic surface stress as a driving force for interfacial mixing.Keywords
This publication has 15 references indexed in Scilit:
- Growth of As overlayers on vicinal Si(100) surfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Design of a new photo-emission/low-energy electron microscope for surface studiesUltramicroscopy, 1991
- Low-energy electron microscopy of semiconductor surfacesJournal of Vacuum Science & Technology A, 1991
- Mechanical stresses in (sub)monolayer epitaxial filmsPhysical Review Letters, 1990
- Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)Journal of Vacuum Science & Technology A, 1990
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Si(100) Surface under an Externally Applied StressPhysical Review Letters, 1988
- Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystalsPhysical Review B, 1986
- An analytical reflection and emission UHV surface electron microscopeUltramicroscopy, 1985
- Ion beam crystallography of the Ni(110)−(2 × 1)O surfaceSurface Science, 1981