Growth of InAsGaSb strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor
- 1 January 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 170 (1-4) , 777-782
- https://doi.org/10.1016/s0022-0248(96)00578-7
Abstract
No abstract availableKeywords
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