Monitoring of MOCVD reactants by UV absorption
- 1 November 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (11) , 1703-1706
- https://doi.org/10.1007/bf02676836
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Process monitoring during metalorganic chemical vapor deposition using FTIR spectroscopyPublished by SPIE-Intl Soc Optical Eng ,1993
- Gas phase monitoring of reactions under InP MOVPE growth conditions for the decomposition of tertiarybutyl phosphine and related precursorsJournal of Crystal Growth, 1992
- Reactive chemical intermediates in metalorganic chemical vapor deposition of GaAsApplied Physics Letters, 1992
- Measurement and control of reagent concentrations in MOCVD reactor using ultrasonicsJournal of Crystal Growth, 1992
- The operation of metalorganic bubblers at reduced pressureJournal of Vacuum Science & Technology A, 1990
- In situ measurement of the metalorganic and hydride partial pressures in a MOCVD reactor using ultraviolet absorption spectroscopyJournal of Crystal Growth, 1989
- A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Metal-Organic Chemical Vapor Deposition of InSb on Gaas and InSb in an Inverted Stagnation Point Flow GeometryMRS Proceedings, 1988
- Organometallic Exchange Reactions. V. Proton Magnetic Resonance Study of Methyl Group Exchanges among the Trimethyl Derivatives of Group III. The Cage Effect in Organometallic Dissociations1Journal of the American Chemical Society, 1966
- TRIMETHYLALUMINUM: THERMODYNAMIC FUNCTIONS IN THE SOLID AND LIQUID STATES, 0-380°K.; VAPOR PRESSURE, HEAT OF VAPORIZATION, AND ENTROPY IN THE IDEAL GAS STATE1The Journal of Physical Chemistry, 1963