Interface structure of large-period lattice-matched in GaAs/InP superlattices grown by metalorganic molecular beam epitaxy: a high-resolution X-ray diffraction study
- 30 November 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 144 (1-2) , 9-14
- https://doi.org/10.1016/0022-0248(94)90003-5
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wellsJournal of Crystal Growth, 1993
- Formation and morphology of InAs/GaAs heterointerfacesPhysical Review B, 1992
- Evidence for intrinsic interfacial strain in lattice-matched As/InP heterostructuresPhysical Review B, 1991
- Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetectionApplied Physics Letters, 1991
- High-resolution x-ray diffraction of InAlAs/InP superlattices grown by gas source molecular beam epitaxyApplied Physics Letters, 1991
- Modification of intrinsic strain at lattice-matched GaInAs/InP interfacesApplied Physics Letters, 1990
- Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InPJournal of Applied Physics, 1989
- Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffractionApplied Physics Letters, 1988
- Interface roughness and period variations in MQW structures determined by X-ray diffractionJournal of Applied Crystallography, 1988
- Improved assessment of structural properties of As/GaAs heterostructures and superlattices by double-crystal x-ray diffractionPhysical Review B, 1986