Conditions for Micropipe Dissociation by 4H-SiC CVD Growth
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 261-264
- https://doi.org/10.4028/www.scientific.net/msf.433-436.261
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Influence of 4H-SiC Growth Conditions on Micropipe DissociationJapanese Journal of Applied Physics, 2002
- Growth and Electrical Characterization of the Lightly-Doped Thick 4H-SiC EpilayersMaterials Science Forum, 2002
- 1700 V SiC Schottky Diodes Scaled to 25 AMaterials Science Forum, 2001
- Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial GrowthJapanese Journal of Applied Physics, 2000