Structural Transformation of Screw Dislocations via Thick 4H-SiC Epitaxial Growth
- 1 December 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (12R)
- https://doi.org/10.1143/jjap.39.6496
Abstract
In this paper, we studied the structural transformation of screw dislocations through gas-phase 4H-SiC epitaxial growth. We confirmed based on the numbers and features of etch pits on a surface after KOH treatment that some micropipes were closed in the epitaxial layer, and were divided into several elementary screw dislocations. We discuss the magnitude of Burgers vectors of micropipes in 4H-SiC substrates in relation to the number of elementary screw dislocations generated by micropipe closing. A depth analysis further revealed that most micropipe closings took place in the initial stage of epitaxial growth.Keywords
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