Photosensitivity of Ge-doped silica deposited byhollow cathode PECVD
- 20 June 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (13) , 1198-1199
- https://doi.org/10.1049/el:19960791
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Fabrication of low-temperature PECVD channel waveguides with significantly improved loss in the 1.50-1.55-μm wavelength rangeIEEE Photonics Technology Letters, 1995
- Direct UV writing of buried singlemode channelwaveguides in Ge-doped silica filmsElectronics Letters, 1994
- UV written 1.5 μm reflection filters in single mode planar silica guidesElectronics Letters, 1992
- Low-loss PECVD silica channel waveguides for optical communicationsElectronics Letters, 1990