Movpe Growth of High Quality Al_xGa_1−xN/Ga_yIn_1-yN (x>0, y<1) Heterostructures for Short Wavelength Light Emitter

This publication has 21 references indexed in Scilit:

• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
  Applied Physics Letters, 1994
• p-type zinc-blende GaN on GaAs substrates
  Applied Physics Letters, 1993
• Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
  Applied Physics Letters, 1993
• Growth of Single Crystal Al_xGa_1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
  Japanese Journal of Applied Physics, 1993
• High-power InGaN/GaN double-heterostructure violet light emitting diodes
  Applied Physics Letters, 1993
• Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation
  Japanese Journal of Applied Physics, 1992
• Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al_0.1Ga_0.9N Layered Structures
  Japanese Journal of Applied Physics, 1991
• Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
  Journal of Luminescence, 1991
• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
  Thin Solid Films, 1988
• Electron-hole plasma generation in gallium nitride
  Solid State Communications, 1986