Electron thermal emission rates of nickel centers in silicon
- 30 September 1986
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 29 (9) , 883-884
- https://doi.org/10.1016/0038-1101(86)90008-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Section de capture des trous sur le niveau Ev + 0,34 eV de Si : PtRevue de Physique Appliquée, 1980
- Characterisation of properties of nickel in silicon using thermally stimulated capacitance methodSolid-State Electronics, 1977
- Electrical Properties of High-Resistivity Nickel-Doped SiliconJournal of Applied Physics, 1970
- The properties of nickel in siliconProceedings of the IEEE, 1969
- Dissociative Diffusion of Nickel in Silicon and Self-Diffusion of SiliconJapanese Journal of Applied Physics, 1967
- Behavior of Nickel as an Impurity in SiliconJapanese Journal of Applied Physics, 1964
- Properties of Silicon Doped with NickelJapanese Journal of Applied Physics, 1963
- THE SOLID SOLUBILITY OF NICKEL IN SILICON DETERMINED BY NEUTRON ACTIVATION ANALYSISApplied Physics Letters, 1962