Field-induced Coulomb coupling in semiconductor macroatoms: Application to single-electron quantum devices
- 10 September 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (11) , 1676-1678
- https://doi.org/10.1063/1.1399003
Abstract
A novel approach for the control of exciton-exciton Coulomb coupling in semiconductor macroatoms/molecules is proposed. We show that by applying properly tailored external fields, we can induce ---or significantly reinforce--- excitonic dipoles, which in turn allows to control and magnify intra- as well as inter-dot few-exciton effects. Such dipole-dipole interaction mechanism will be accounted for within a simple analytical model, which is found to be in good agreement with fully three-dimensional calculations. The proposed approach may play an important role for the design and realization of fully-optical quantum gates as well as ultrafast optical switchesKeywords
All Related Versions
This publication has 17 references indexed in Scilit:
- Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substratesApplied Physics Letters, 2001
- Quantum Information Processing with Semiconductor MacroatomsPhysical Review Letters, 2000
- Discrete energy level separation and the threshold temperature dependence of quantum dot lasersApplied Physics Letters, 2000
- Effects of few-particle interaction on the atomiclike levels of a single strain-induced quantum dotPhysical Review B, 2000
- Excitonic Absorption in a Quantum DotPhysical Review Letters, 2000
- Quantum gates by coupled asymmetric quantum dots and controlled-NOT-gate operationPhysical Review A, 2000
- Exciton Storage in Semiconductor Self-Assembled Quantum DotsScience, 1999
- Quantum computation with quantum dots and terahertz cavity quantum electrodynamicsPhysical Review A, 1999
- Semiconductor Nanocrystals as Fluorescent Biological LabelsScience, 1998
- Shell Filling and Spin Effects in a Few Electron Quantum DotPhysical Review Letters, 1996