Smart-Cut® process using metallic bonding:Application to transfer of Si, GaAs, InP thin films
- 10 June 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (12) , 1024-1025
- https://doi.org/10.1049/el:19990663
Abstract
The ability to obtain thin films using the Smart-Cut® process combined with metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic layers.Keywords
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