The effect of surface states on the characteristics of MIS field effect transistors
- 31 October 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (10) , 1199-1207
- https://doi.org/10.1016/0038-1101(78)90366-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- A GaAs/SixOyNz MIS FETJournal of Applied Physics, 1976
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- Depletion-mode GaAs MOS FETApplied Physics Letters, 1976
- A new mobility-field expression for the calculation of MOSFET characteristicsSolid-State Electronics, 1976
- Surface Potential and Surface State Density in Anodized GaAs MOS CapacitorsJapanese Journal of Applied Physics, 1976
- Improved method of anodic oxidation of GaAsElectronics Letters, 1975