rf-diode sputtered Permalloy film

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Abstract
Permalloy films were deposited by rf‐diode sputtering on silicon and glass substrates. The in‐plane film stress was measured as a function of film thickness. The cause of stress changes with film thickness is discussed. The deposition rate and the in‐plane stress have been correlated with various process parameters, such as rf power, argon pressure, and substrate bias. A regression analysis yields an excellent fit to the experimental data. The in‐plane stress in the film was measured using the wafer‐bending method and the x‐ray method. The stress of Permalloy films on silicon wafer can be either compressive or tensile, depending on the deposition parameters. The stress increases with increased deposition rate. Stress‐free films on silicon can be obtained for a deposition rate of about 7.5 nm/min. The films have good magnetic properties when deposited in these conditions.

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