The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature
- 31 October 1989
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 4 (1-4) , 417-422
- https://doi.org/10.1016/0921-5107(89)90280-8
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Defect formation in SiO2/Si(100) by metal diffusion and reactionApplied Physics Letters, 1988
- New approach to the kinetics of silicon vapor phase epitaxy at reduced temperatureApplied Physics Letters, 1987
- In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBEJournal of Crystal Growth, 1987
- High-Temperature SiDecomposition at the Si/Si InterfacePhysical Review Letters, 1985
- Differential phase contrast in scanning optical microscopyJournal of Microscopy, 1984
- A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation Density in Silicon Molecular Beam EpitaxyJournal of the Electrochemical Society, 1983
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979
- Measurement of the Finish of Diamond-Turned Metal Surfaces By Differential Light ScatteringOptical Engineering, 1977
- Growth of an oxide film on a clean silicon surface and the kinetics of its evaporationThin Solid Films, 1976
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971