High-performance thin-film silicon-on-insulator CMOS transistors in porous anodized silicon
- 1 March 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (3) , 129-131
- https://doi.org/10.1109/55.31691
Abstract
Ultrathin-film silicon-on-insulator (SOI) CMOS transistors, produced in silicon islands 100 nm thick, formed by oxidation of porous anodized silicon, are described. Both n-channel and p-channel mobilities are similar to equivalent bulk values. Subthreshold slopes are less than 80 mV/decade and junction leakages are approximately 0.1 pA/ mu m. No kink is seen in the output characteristics of the n-channel transistors as the silicon film is fully depleted. A ring-oscillator gate delay of 161 ps has been achieved, at a power dissipation of 270 mu W/stage, for 1.5- mu m gate length.Keywords
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