ON THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIES
- 1 December 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (11) , 350-351
- https://doi.org/10.1063/1.1755009
Abstract
The dielectric constant of GaAs in the range 1.9–13 GHz has been determined from measurements of the fringing capacitance of bulk samples terminating a coaxial line. There is no indication of a large deviation from the low‐frequency value recently reported by Larrabee and Hicinbothem, although there may be a small resonance effect near 10 GHz.Keywords
This publication has 8 references indexed in Scilit:
- RESONANCE BEHAVIOR OF THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIESApplied Physics Letters, 1967
- Measurement of the negative differential mobility of electron in GaAsPhysics Letters, 1966
- Preparation of 0.5–103 Ω-cm GaAs by acceptor precipation during heat treatment of oxygen grown crystalsSolid State Communications, 1966
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Noncontact Technique for the Local Measurement of Semiconductor ResistivityReview of Scientific Instruments, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964
- Determination of the Effective Ionic Charge of Gallium Arsenide from Direct Measurements of the Dielectric ConstantProceedings of the Physical Society, 1961
- On the Dielectric Constant of Germanium at Microwave FrequenciesProceedings of the Physical Society, 1960