A new physics-based model for time-dependent-dielectric-breakdown
- 1 January 1996
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A new, physics-based model for time dependent dielectric breakdown has been developed, and is presented along with test data obtained by NIST on oxides provided by National Semiconductor. Testing included fields from 5.4 MV/cm to 12.7 MV/cm, and temperatures ranging from 60/spl deg/C to 400/spl deg/C. The physics, mathematical model, and test data, all confirm a linear, rather than an inverse field dependence. The primary influence on oxide breakdown was determined to be due to the dipole interaction energy of the field with the orientation of the molecular dipoles in the dielectric The resultant failure mechanism is shown to be the formation and coalescence of vacancy defects, similar to that proposed by Dumin et al. (1994).Keywords
This publication has 11 references indexed in Scilit:
- Experimental Investigation of the Validity of TDDB Voltage Acceleration ModelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High field emission related thin oxide wearout and breakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- Temperature dependence of trap creation in silicon dioxideJournal of Applied Physics, 1990
- Behavior of SiO2 Under High Electric Field/Current Stress Conditions8th Reliability Physics Symposium, 1986
- A quantitative physical model for time-dependent breakdown in SiO2Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Acceleration Factors for Thin Gate Oxide Stressing8th Reliability Physics Symposium, 1985
- On the Kinetics of the Thermal Oxidation of Silicon: III . Coupling with Other Key PhenomenaJournal of the Electrochemical Society, 1981
- Method of Determining Reliability Screens for Time Dependent Dielectric BreakdownPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Low Field Time Dependent Dielectric Integrity8th Reliability Physics Symposium, 1979
- The tensile fracture of quartz crystalsJournal of Materials Science, 1976