BVCEO Versus BVCBO for 4H and 6H Polytype SiC Bipolar Junction Transistors
- 15 May 2005
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 483-485, 893-896
- https://doi.org/10.4028/www.scientific.net/msf.483-485.893
Abstract
The letter presents a set of design curves that relate the open-base breakdown voltage BVCEO to the open emitter breakdown voltage BVCBO for 4H (0001 and 11-20 orientations) and 6H SiC NPN and PNP Bipolar Junction Transistors. We also present design curves pertaining to the variation of BVCEO with base doping and minority carrier diffusion length in the base for (0001) 4H-SiC BJTs for a 4x1015 cm-3 doped and 12µm thick drift layer for both NPN and PNP BJTs.Keywords
This publication has 9 references indexed in Scilit:
- Impact Ionization Coefficients of 4H-SiCMaterials Science Forum, 2004
- Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiCPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- SiC Power Bipolar Transistors and ThyristorsPublished by Springer Nature ,2004
- 1800 V NPN bipolar junction transistors in 4H-SiCIEEE Electron Device Letters, 2001
- Performance evaluation of high-power wide band-gap semiconductor rectifiersJournal of Applied Physics, 1999
- Study of avalanche breakdown and impact ionization in 4H silicon carbideJournal of Electronic Materials, 1998
- Ionization rates and critical fields in 4H silicon carbideApplied Physics Letters, 1997
- SiC devices: physics and numerical simulationIEEE Transactions on Electron Devices, 1994
- Emitter-collector breakdown voltage
BV
ceo
versus gain
h
FE
for various n-p-n collector doping levelsElectronics Letters, 1980