Optical and structural characterizations of ZnSe/ZnSSe superlattices grown by metalorganic chemical vapor deposition

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Abstract
ZnSe/ZnSSe superlattices (SLs) grown on GaAs substrates were studied with transmission electron microscopy and x‐ray diffraction. Defects were observed in the initial growth stage, but they were recovered with the growth of short‐period SL. The temperature dependent decrease of photoluminescence (PL) intensities improved in the short‐period SL. Clear excitonic absorption peaks were observed in photocurrent spectra and the blue shift of the absorption peaks by the quantum confinement was in reasonable agreement with the calculated peak shift. In a SL with the well width of 93 Å, a biexciton PL peak was observed from the very low excitation power of less than 1 mW/cm2. Details of the biexciton properties are discussed.