Recent developments on metal-silicon interfaces
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 370-381
- https://doi.org/10.1016/0169-4332(92)90258-y
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Structure analysis of Si(111)-(√3 × √3 )R30°/Ag using x-ray standing wavesPhysical Review B, 1991
- High-energy ion channeling study of the atomic displacement of Si(111) surfaces induced by Ag thin filmsSurface Science, 1990
- Recent developments in low-energy ion scattering spectroscopy (ISS) for surface structural analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Study on the Si(111) √3×√3-Ag Surface Structure by X-Ray DiffractionJapanese Journal of Applied Physics, 1988
- A Model on the Mechanism of Room Temperature Interfacial Intermixing Reaction in Various Metal‐Semiconductor Couples: What Triggers the Reaction?Journal of the Electrochemical Society, 1980
- Presence of critical Au-Film thickness for room temperature interfacial reaction between Au(film) and Si(crystal substrate)Solid State Communications, 1980
- Room-temperature interfacial reaction in Au-semiconductor systemsApplied Physics Letters, 1977
- Auger spectroscopic observation of Si–Au mixed-phase formation at low temperaturesApplied Physics Letters, 1972
- Formation of silicon oxide over gold layers on silicon substratesJournal of Applied Physics, 1972
- LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUMApplied Physics Letters, 1971