Selective self-optical compensation effect for a newly discovered acceptor-associated emission in Zn+ ion-implanted GaAs
- 1 October 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7) , 2502-2504
- https://doi.org/10.1063/1.337165
Abstract
Photoluminescence measurements were carried out at 2 K for Zn+ ion‐implanted GaAs, where the concentration of Zn was widely varied from 3×1016 to 1×1021 cm−3. Two Zn+‐associated emissions were formed. One emission is at 1.512 eV, g, and the other emission [g‐g] is just below g and this moves towards the lower energy level with increasing Zn concentration, [Zn]. The intensity of [g‐g] was enhanced with increasing [Zn], up to [Zn]=3×1017 cm−3, and was gradually suppressed for [Zn] beyond that concentration. This selective self‐optical compensation effect (SSOC) for [g‐g] was found to occur for moderately heavy ion acceptor species such as Zn and Cd, although [g‐g] is a common emission among many other acceptor impurities. In addition two new emissions were observed between g and [g‐g] at certain [Zn]. Preliminary theoretical explanations are presented for this SSOC effect.This publication has 7 references indexed in Scilit:
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