Concentration ratio dependence of selective optical compensation effect in dually Zn+ and Se+ ion-implanted GaAs
- 23 June 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (25) , 1745-1747
- https://doi.org/10.1063/1.96822
Abstract
The selective optical compensation effect in which exclusively acceptor‐associated emissions g and [g‐g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+ (acceptor)‐implanted and Se+(donor)‐implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017 cm−3. It was revealed for the first time that Se atoms with one‐tenth of the concentration of Zn have the ability to significantly suppress the [g‐g] emission. However, the g emission is not significantly suppressed by the presence of even an equal concentration of Se atoms.Keywords
This publication has 12 references indexed in Scilit:
- Selective optical compensation effect of two new near-band-edge emissions in simultaneously acceptor (Zn+) and donor (Se+) ion-implanted GaAsJournal of Applied Physics, 1986
- Formation of radiative complex-centers by dual implantation of C+ and O+ ions into GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAsApplied Physics Letters, 1986
- Photoluminescence spectra of undoped GaAs grown by molecular-beam epitaxy at very high and low substrate temperaturesJournal of Applied Physics, 1986
- Observation of new common emissions in GaAs produced by ion implantation of four acceptor impuritiesApplied Physics Letters, 1986
- Photoluminescence of very dilutely C+ ion-implanted GaAsApplied Physics Letters, 1985
- New emission lines in highly carbon ion-implanted GaAsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- The incorporation and characterisation of acceptors in epitaxial GaAsJournal of Physics and Chemistry of Solids, 1975
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974
- LUMINESCENCE DUE TO THE ISOELECTRONIC SUBSTITUTION OF BISMUTH FOR PHOSPHORUS IN GALLIUM PHOSPHIDEApplied Physics Letters, 1966