Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAs
- 3 February 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (5) , 329-331
- https://doi.org/10.1063/1.97013
Abstract
Photoluminescence studies of Si+, S+, Se+, and Te+ ion‐implanted GaAs made by molecular beam epitaxy were carried out at 2 K. A new emission denoted by [D] was commonly obtained at 1.408 eV. It was also found that the controversial near band‐edge emissions, ‘g’ and [g‐g], which were originally produced by the ion implantation of acceptor impurities, were not formed by donor ion implantation.Keywords
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