All-optical reflection modulator using a nonlinear heteronipi structure within an asymmetric Fabry–Perot optical cavity

Publisher Website
Google Scholar
Abstract
Reflectivity changes of ∼40% and contrast ratios of ∼100% are reported at optical excitation densities less than 100 μ W/cm 2 in an AlAs/AlGaAs/GaAs reflection-mode optical modulator. Switching and in-plane transport dynamics as a function of pixel size are also reported. Optical modulation occurs via the quantum-confined Stark effect in GaAs quantum wells grown within a “nipi” dopingsuperlattice and is controlled through microcavity étalon effects. Optical bistability without the need for external electronic biasing circuitry is projected.