Chemical Shifts of Photoelectron and Auger Lines in Ag- or Cu-Doped Amorphous GeSe2 and As2Se3

Publisher Website
Google Scholar
Abstract
Chemical shifts of the Ag 3d5/2,3/2, Cu 2p3/2,1/2, Ge 3d, 3p3/2,1/2, As 3d, 3p3/2,1/2, and Se 3d, 3p3/2,1/2, photoelectron lines, and the AgM4,5N45N45, GeL3M45M45 and CuL3M45M45 Auger lines are measured for Ag and Cu films, and amorphous films of Ge, As, Se, GeSe2, As2Se3, Ag-doped GeSe2, Ag-doped As2Se3 and Cu-doped As2Se3. The chemical shifts of Ge, Ag and Cu photoelectron lines are corrected for by an extra-atomic relaxation energy obtained from the chemical shifts of Ge, Ag and Cu Auger lines. These results are explained for in view of the electronegativity scales. The chemical shifts in Ag-doped GeSe2 are treated in accordance with the valence shell potential model; Ag–Se and Ge–Se bonds are attributed to covalent bonds rather than ionic bonds in terms of the amounts of ionic character and the electronegativity differences.