Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry
- 30 November 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (11) , 1959-1963
- https://doi.org/10.1016/s0038-1101(02)00129-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of dilute SF6 discharges for application to SiC reactive ion etchingJournal of Vacuum Science & Technology A, 2000
- High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixturesApplied Physics Letters, 1999
- Oxygen-free dry etching of α-SiC using dilute SF6:Ar in an asymmetric parallel plate 13.56 MHz dischargeApplied Physics Letters, 1998
- Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmasJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- A Review of SiC Reactive Ion Etching in Fluorinated PlasmasPhysica Status Solidi (b), 1997
- Comparison of dry etch chemistries for SiCJournal of Vacuum Science & Technology A, 1997
- Etching of 6H‐SiC and 4H‐SiC using NF 3 in a Reactive Ion Etching SystemJournal of the Electrochemical Society, 1996
- End point control via optical emission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Reactive ion etching of SiC thin films using fluorinated gasesJournal of Vacuum Science & Technology B, 1986
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle densityJournal of Applied Physics, 1980