A Resonant-Tunneling Bipolar Transistor (RBT) –A New Functional Device with High Current Gain
- 1 February 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (2A) , L131
- https://doi.org/10.1143/jjap.26.l131
Abstract
A resonant-tunneling bipolar transistor (RBT) has been proposed and demonstrated. This is a AlGaAs/GaAs hetero-junction bipolar transistor using a AlAs/GaAs/ AlAs quantum well resonator as a minority carrier injector. The RBT exhibits a collector-current peak with respect to the base-emitter voltage, and therefore a negative transconductance, due to resonant-tunneling of electrons. The common-emitter current gain reaches 20 at 77 K. We also observed a base-current peak due to resonant-tunneling of holes.Keywords
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