Theoretical calculation for a ZnSe-Ge(110) heterojunction with an ultrathin intralayer
- 15 May 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 35 (14) , 7721-7724
- https://doi.org/10.1103/physrevb.35.7721
Abstract
We present a consistent tight-binding calculation of the ZnSe-Ge(110) heterojunction with an Al monolayer between the two semiconductors. Our results are in reasonable agreement with the experimental evidence found by Niles et al., showing that an ideal interface is an adequate model to explain the interface behavior. The shift in the valence-band offset due to the Al intralayer is interpreted as a shift in the difference between the charge-neutrality levels of both semiconductors, induced by the deposited intralayer.Keywords
This publication has 21 references indexed in Scilit:
- Early Stages of GaAs-Ge(110) Interface FormationEurophysics Letters, 1986
- Heterojunction band discontinuity control by ultrathin intralayersApplied Physics Letters, 1985
- Comment on ‘‘Theory of semiconductor heterojunctions: The role of quantum dipoles’’Physical Review B, 1985
- Microscopic effects at GaAs/Ge(100) molecular-beam-epitaxy interfaces: Synchrotron-radiation photoemission studyPhysical Review B, 1985
- Experimental study of the GaP-Si interfacePhysical Review B, 1984
- New multilayer and graded gap optoelectronic and high speed devices by band gap engineeringSurface Science, 1984
- Schottky Barrier Heights and the Continuum of Gap StatesPhysical Review Letters, 1984
- Microscopic study of semiconductor heterojunctions: Photoemission measurement of the valance-band discontinuity and of the potential barriersPhysical Review B, 1983
- Energy barriers and interface states at heterojunctionsJournal of Physics C: Solid State Physics, 1979
- A simple approach to heterojunctionsJournal of Physics C: Solid State Physics, 1977