Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1- mu m finger spacing
- 1 May 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (5) , 209-211
- https://doi.org/10.1109/55.31723
Abstract
The temporal response of a GaAs metal-semiconductor-metal (MSM) photodetector with a finger spacing of 0.1 mu m is discussed. The intrinsic detector has a minor effect (25% increase) on the full width at half-maximum (FWHM) of the temporal response of the device and its parasitic circuit elements. The analysis indicates that a long time constant due to the decay of holes is solely responsible for this increase. The smallest FWHM for this detector is estimated to be less than 2.5 ps.Keywords
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