III-V compound semiconductor MOSFETs using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as gate dielectric
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (10647775) , 18-21
- https://doi.org/10.1109/gaas.1997.628229
Abstract
We report a III-V based metal oxide semiconductor field effect transistor (MOSFET) technology using Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate insulator. Enhancement-mode p- and n-channel, depletion-mode n-channel GaAs MOSFETs, and enhancement-mode n-channel In/sub 0.53/Ga/sub 0.47/As MOSFETs were demonstrated.Keywords
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