Metalorganic molecular beam epitaxial growth of high-quality Cd1−xZnxTe (0≤x≤0.27) films

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Abstract
High‐quality (001) Cd1−xZnxTe (0≤x≤0.27) films were grown by metalorganic molecular beam epitaxy on (001) GaAs substrates using thermally precracked dimethylcadmium, diethylzinc, and diethyltelluride. Cd1−xZnxTe/GaAs (0≤x≤0.05) films of 6–9 μm thickness exhibited x‐ray rocking curve full widths at half‐maximum of 200–240 arcsec, and 290–350 arcsec was measured for Cd1−xZnxTe/GaAs (0.09≤x≤0.17). The crystalline quality for the range of x values (0≤x≤0.27) reported here surpasses that previously published in the literature. The 5 K photoluminescence spectra of the Cd1−xZnxTe layers were dominated by strong and sharp bound excitonic transitions. In addition, the free excitonic transition was observed in Cd1−xZnxTe layers with 0≤x≤0.06. Secondary ion mass spectrometry measurements showed that the films were free of O and C contamination.

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