Optically induced frequency-dependent loss in hydrogenated amorphous silicon
- 30 December 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (36) , L1199-L1204
- https://doi.org/10.1088/0022-3719/21/36/002
Abstract
A novel experiment is described in which frequency-dependent loss due to carriers that are optically excited and then trapped in the band tails of hydrogenated amorphous silicon is observed. The decay of the signal over long periods gives information about recombination in this material at low temperatures.Keywords
This publication has 12 references indexed in Scilit:
- Frequency dependent loss in glow discharge amorphous siliconJournal of Non-Crystalline Solids, 1987
- Diffusion and relaxation of energy in disordered organic and inorganic materialsPhysical Review B, 1986
- Hopping theory of band-tail relaxation in disordered semiconductorsPhysical Review B, 1985
- Optically induced frequency dependent loss in AGE and ASIJournal of Non-Crystalline Solids, 1985
- Hopping in Exponential Band TailsPhysical Review Letters, 1985
- Infrared quenching of photoluminescence and photoconductivity in a-Si:HJournal of Non-Crystalline Solids, 1984
- Time-dependent non-equilibrium exciton diffusion in an organic glassPhilosophical Magazine Part B, 1984
- Photoconductivity and photoluminescence of a-Si:H at low temperatureJournal of Non-Crystalline Solids, 1984
- IR-induced transients of photoluminescence and photoconductivity in a-Si:HAIP Conference Proceedings, 1984
- Frequency-dependent loss in amorphous semiconductorsAdvances in Physics, 1982