Numerical study of transport phenomena in MOCVD reactors using a finite volume multigrid solver
- 1 December 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 125 (3-4) , 612-626
- https://doi.org/10.1016/0022-0248(92)90303-z
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- A study of 2- and 3-D transport phenomena in horizontal chemical vapor deposition reactorsChemical Engineering Science, 1991
- Gas‐Phase and Surface Reaction Mechanisms in MOCVD of GaAs with Trimethyl‐Gallium and ArsineJournal of the Electrochemical Society, 1991
- Flow Phenomena in Chemical Vapor Deposition of Thin FilmsAnnual Review of Fluid Mechanics, 1991
- Detailed models of the MOVPE processJournal of Crystal Growth, 1991
- Finite volume multigrid prediction of laminar natural convection: Bench‐mark solutionsInternational Journal for Numerical Methods in Fluids, 1990
- Transport phenomena in vertical reactors for metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Flow and heat transfer in CVD reactors: Comparison of Raman temperature measurements and finite element model predictionsJournal of Crystal Growth, 1990
- Three-dimensional modelling of horizontal chemical vapor depositionJournal of Crystal Growth, 1990
- Transport phenomena and chemical reaction issues in OMVPE of compound semiconductorsJournal of Crystal Growth, 1989
- Complex flow phenomena in MOCVD reactorsJournal of Crystal Growth, 1986