Role of elastic strain and relaxation on the molecular-beam epitaxial growth of III-V alloy pseudomorphic layers
- 15 June 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (17) , 10419-10422
- https://doi.org/10.1103/physrevb.37.10419
Abstract
Elastic strain and relaxation are shown to play a central role in the local equilibrium properties of III-V alloys during molecular-beam epitaxy. An epitaxial alloy statistical model which accounts for these effects is proposed. The variation with temperature of the In-incorporation coefficient in (A1,In)As/InP and (A1,In)As/GaAs, measured from reflection high-energy electron-diffraction intensity oscillations, is discussed in the framework of the proposed model.Keywords
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