Fullerene ion irradiation to silicon
- 1 January 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 121 (1-4) , 480-483
- https://doi.org/10.1016/s0168-583x(96)00554-x
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Surface modifications by gas cluster ion beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Vacancy related defect profiles in MeV cluster-ion irradiated siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Defect production by MeV cluster impactsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Low-damage surface processing by gas cluster ion beamsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Tracks in Metals by MeV FullerenesPhysical Review Letters, 1995
- Broad fullerene-ion beam generation and bombardment effectsApplied Physics Letters, 1994
- Irradiation effects of gas-cluster CO2 ion beams on SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Vapor pressure of BuckminsterfullereneApplied Physics Letters, 1992
- Surface Scattering from W Single Crystals by MeVIonsPhysical Review Letters, 1977