Low temperature liquid phase epitaxy of silicon
- 1 March 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 57 (1) , 43-47
- https://doi.org/10.1016/0022-0248(82)90246-9
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Growth-promoting dissociated dislocations in solution-grown siliconThin Solid Films, 1981
- Analysis of dislocations creating monomolecular growth stepsJournal of Crystal Growth, 1981
- A lateral microscopic growth model for heterogeneous impurity incorporation during Czochralski crystal growthApplied Physics Letters, 1980
- Solution growth of Indium-Doped siliconJournal of Electronic Materials, 1979
- Dopant Distribution in Silicon Liquid Phase Epitaxial Layers: Meltback EffectsJournal of the Electrochemical Society, 1979
- Liquid‐Phase Epitaxial Growth of Gallium‐Doped SiliconJournal of the Electrochemical Society, 1978
- Liquid phase epitaxy of silicon at very low temperaturesJournal of Crystal Growth, 1977
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Liquid Phase Epitaxial Growth of Silicon in Selected AreasJournal of the Electrochemical Society, 1972
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965