A comparative study of GaSb (100) surface passivation by aqueous and nonaqueous solutions
- 29 September 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (13) , 2587-2589
- https://doi.org/10.1063/1.1613994
Abstract
We report a nonaqueous passivation regime consisting of The use of a nonpolar, aprotic organic medium required the addition of a specific chelating agent (15-crown-5) to solubilize sodium sulfide, and organic oxidizing agents (anthraquinone, benzophenone, etc.) to act as electron acceptors. The surface optical and chemical properties of GaSb surfaces after aqueous and nonaqueous sulfide treatments were compared. Nonaqueous passivation resulted in higher photoluminescence (PL) intensity, lower oxide content, and a less amount of elemental Sb than aqueous passivation. The PL intensity from passivated surfaces was correlated with the standard reduction potentials of electron acceptors.
Keywords
This publication has 19 references indexed in Scilit:
- Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuumJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- PASSIVATION OF GaSb SINGLE CRYSTAL SURFACES STUDIED BY PHOTOLUMINESCENCEModern Physics Letters B, 2001
- Chalcogenide passivation of III–V semiconductor surfacesSemiconductors, 1998
- Effect of ruthenium passivation on the optical and electrical properties of gallium antimonideJournal of Applied Physics, 1995
- Passivation of GaSb by sulfur treatmentJournal of Electronic Materials, 1994
- GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S-treated GaAs (100) surfacesApplied Physics Letters, 1989
- Structure and stability of passivating arsenic sulfide phases on GaAs surfacesJournal of Vacuum Science & Technology B, 1989
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Oxide‐Substrate and Oxide‐Oxide Chemical Reactions in Thermally Annealed Anodic Films on GaSb , GaAs , and GaPJournal of the Electrochemical Society, 1980