Passivation of GaSb by sulfur treatment
- 1 January 1994
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (1) , 7-12
- https://doi.org/10.1007/bf02651260
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Role of defects in the passivation of III–V semiconductor surfaces modified by alkali metals: O2/Rb/p- and n-type GaSb(110)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Electrical properties of GaSb Schottky diodes and p-n junctionsMaterials Science and Engineering: B, 1992
- Ionization coefficients in Ga0.96Al0.04SbJournal of Applied Physics, 1990
- Resonant interband coupling in single-barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSbJournal of Applied Physics, 1990
- A new GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling diode and its tunneling mechanismJournal of Applied Physics, 1990
- Interfacial properties of n-GaAs and polymer deposited by plasma chemical vapor depositionApplied Physics Letters, 1989
- Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructuresApplied Physics Letters, 1989
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Ga1-xAlxSb avalanche photodiodes: Resonant impact ionization with very high ratio of ionization coefficientsIEEE Journal of Quantum Electronics, 1981