Interface-state effects in irradiated MOS structures
- 1 December 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (12) , 5357-5359
- https://doi.org/10.1063/1.323575
Abstract
The effect that ionizing radiation has on Si‐SiO2 MOS devices is to create trapped holes and interface states at the Si‐SiO2 interface. Several recent publications claim that it is possible to distinguish donor or acceptor interface states by analyzing C‐V curves. It is shown here that in the presence of interface states it is not possible, in general, to determine either interface‐state type or the quantity of fixed oxide charge from C‐V measurements. Furthermore, observed differences between flatband voltage shifts on p‐ and n‐type MOS devices are shown to be independent of whether interface states are donors or acceptors.This publication has 9 references indexed in Scilit:
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