GaAs/AlGaAs Light Emitters Fabricated on Undercut GaAs on Si

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Abstract
Stable GaAs/AlGaAs light-emitting diodes (LEDs) on Si substrates were realized by growing device structures on undercut GaAs on Si (UCGAS) which reduces both thermal stress and dislocation density. The output efficiency of the UCGAS LEDs was almost the same as that of homoepitaxial LEDs, and maintained stable operation for 3000 h. The device degradation mechanism in conjunction with the residual stress and the dislocation density was investigated, and it was found that the stress had a more significant effect on device degradation than the dislocation density. The output efficiency and the thermal properties of the LEDs are also analyzed. UCGAS lasers were fabricated, and both efficiency and threshold current equal to those of homoepitaxial lasers were obtained.