The depth distribution of disorder produced by room temperature 40 keV N + ion irradiation of silicon

1 January 1979

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 41 (2) , 107-111
https://doi.org/10.1080/00337577908236954

Abstract

The depth distribution of disorder produced by room temperature 40 keV N⁺ ion irradiation of silicon was monitored by high depth resolution RBS and channelling techniques. A bimodal depth distribution of disorder resulted under certain implantation conditions and a significant dependence of the damage on N⁺ flux and fluence was observed.

Keywords

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